Abstract
A sol‐gel process was used to prepare pyroelectric Ba0.8Sr0.2TiO3 thin films with large columnar grains (100–200 nm in diameter) on Pt/Ti/SiO2/Si substrates, via using a 0.05M solution precursor. The relationship between dielectric constant and temperature (ɛr‐T) showed two distinctive phase transitions in the Ba0.8Sr0.2TiO3 thin films. Both the remnant polarization and the coercive field decreased as the temperature increased from −73°C to 40°C. Its low dissipation factor (tan δ= 2.6%) and high pyroelectric coefficient (p= 4.6 × 10−4 C·(m2·K)−1 at 33°C), together with its good insulating properties, made the prepared Ba0.8Sr0.2TiO3 thin films promising for use in uncooled infrared detectors and thermal imaging applications.
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