Abstract
The porous Ti film getters on (100) silicon substrates were prepared using the glancing angle deposition of dc (direct current) magnetron sputtering method. The main deposition parameters that produce the porous Ti films are the low substrate temperature and high glancing angle. The larger the glancing angle is, the higher the porosity of the Ti films is. The porous films, grown at the glancing angle of 70° and room substrate temperature, are composed of nano-columnar crystalline crystals. The size and inter-distance between the columnar crystals are 70 nm and 30 nm, respectively. The porous Ti films have larger capability to absorb the oxygen than that of dense Ti films and Si substrate. The suitable operation condition of porous Ti film getters was also established.
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