Abstract
ABSTRACT A metal-ferroelectric-insulator-semiconductor structure (MFIS) has been fabricated by ZrO2and Bi3.25La0.75Ti3O12 as the buffer layer and ferroelectric film in forming MFIS diodes on Si(100) substrates, respectively. ZrO2 films were prepared by a sol-gel method. Then, they were carried out dry O2 annealing in a rapid thermal annealing (RTA) furnace at 700°C for 10 min. On the ZrO2/Si structures, Bi3.25La0.75Ti3O12 films were deposited by sol-gel method and they crystallized rapid thermal annealing in O2 atmosphere at 750°C for 30 min. They were characterized by X-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The memory window width in capacitance-voltage(C-V) curve of the Au/BLT/ZrO2/Si diode was about 1.0 V for a voltage sweep of ± 4 V. Base on these results, we fabricated the MFIS-FET structure. The memory window width in drain current–gate voltage (ID–VG) curve of the MFIS-FET was about 0.7 V.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
