Abstract
The present work involves the fabrication and characterization of two different metal/insulator/semiconductor (MIS) structures: Pd/TiO2/Si and Pd/TiO2/SiO2/Si. The TiO2 thin films on the n-type Si 〈100〉 substrate were deposited using low-temperature arc vapor deposition process. The electrical characterizations of MIS structures were investigated using capacitance-voltage and current density-voltage measurements. The effects of annealing on the properties of the films were also studied. Furthermore, the structural, surface morphological, and electrical properties of the devices were compared with those obtained using other deposition techniques.
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