Abstract
Metal–ferroelectric–semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi4Ti3O12/p-Si (100) structures were fabricated. The Ids–Vg hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric polarization of Bi4Ti3O12 and the memory window with a gate voltage of ±6 V was 1.2 V. The current ratio of Ids(on) to Ids(off) was over two orders in magnitude at zero gate voltage which indicates the MFS-FET can be used in nondestructive readout (NDRO) applications.
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