Abstract
We have fabricated and characterized Pt/(Bi, La)4Ti3O12(BLT)/Pt/Ti/SiO2/Si metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures for ferroelectric-gate transistor applications. It is demonstrated that BLT films fabricated using the metalorganic decomposition (MOD) technique at 750°C have excellent electrical properties. Remanent polarization 2Pr as large as 30 µC/cm2 can be obtained. It is also shown that in the memory window increases with the area ratio SF:SM of the MFMIS structure and that a large memory window (3 V) can be obtained for a voltage sweep of ±5 V for MFMIS structures with an area ratio SF:SM of 1:15. In addition, it is demonstrated that MFMIS structures with an area ratio SF:SM of 1:15 have good data retention characteristics.
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