Abstract
InAs/GaAs strained-layer superlattices (SLSs), grown by molecular-beam epitaxy on variously oriented GaAs substrates, have been investigated. X-ray diffraction and photoluminescence (PL) studies reveal the formation of coherent SLS and microstructures due to the three-dimensional nucleation is strongly dependent on the substrate orientation and the growth parameters. The relationship between PL spectra and growth modes and potential applications of self-aligned microstructures, including quantum pyramids, are described.
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