Abstract
The InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) have been fabricated using hydrogen ion-implantation and laser liftoff techniques. The RCLEDs structure consisted of an multiple-quantum-well active layer between the top (5 pairs) and bottom (7.5 pairs) dielectric distributed Bragg reflectors with optical reflectance of 85% and 99.9%, respectively. The insulation layers of the RCLEDs with and without implantation were formed by the hydrogen ion-implantation layers of concentration and film, respectively. The corresponding forward turn-on voltage at dc current density injection were about and for the RCLEDs with and without implantation. The light output intensity of the RCLEDs with implantation is higher by a factor of 1.4 as compared to that of the similar structure without implantation at a current density of . The directionality of RCLEDs with implantation is superior to that of RCLEDs without implantation.
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