Abstract
InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) have been fabricated using hydrogen ion-implantation and laser lift-off techniques. The RCLED structure consisted of an InGaN/GaN multiple-quantum-well active layer between top (5-pairs) and bottom (7.5-pairs) dielectric TiO2/SiO2 distributed Bragg reflectors with optical reflectances of 85% and 99.9%, respectively. The insulating layers of the RCLEDs were formed by either hydrogen ion implanted layers of 1x1014 ions/cm2 or SiO2 films, respectively. The corresponding forward turn-on voltages for a 0.6 KA/cm2 dc injection current density were about 4.58 and 4.55 V, respectively. The light output intensity of the RCLEDs with H+ implantation is higher by a factor of 1.4 compared with the SiO2 structure at a current density of 0.6 KA/cm2. The RCLEDs with H+ implantation have superior directionality compared to the RCLEDs without H+ implantation.
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