Abstract
A technique is described for the fabrication and characterization of indium tin oxide (ITO) thin films which are transparent and electrically conducting. The films are deposited by an r.f. sputtering technique followed by vacuum heat treatment to obtain the required conductivity and optical transparency. When a sputtering target concentration of 9 mol.% SnO 2 in In 2O 3 was used and the films obtained were annealed at 10 -2 Torr the transparent conductors had a resistivity as low as 3 × 10 -4 Ω cm with a 90% optical transmission, and after ion etching they were successfully used in a.c. and d.c. electroluminescent flat panel devices.
Published Version
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