Abstract
Oxide heterojunction diodes with La 0.5Sr 0.5CoO 3 (LSCO) and n-type Al-doped ZnO (AZO) thin films on Si substrate were fabricated by radio frequency (r. f.) magnetron sputtering technology. The AZO thin film was first deposited on the Si substrate and annealed in an argon atmosphere. The heterostructure was obtained by stacking the LSCO thin film on the AZO thin film without annealing. The thicknesses of the AZO and LSCO thin films were about 300 nm and 200 nm, respectively. The LSCO/AZO diode exhibited an asymmetric current–voltage relationship with a reverse shape of a good rectifying property. The build-in voltage of the diode was about 1.5 V and was found to be independent of the annealing temperature of the AZO film. The diode with an AZO thin film annealed at 500 °C exhibited the maximum forward-to-reverse current ratio of about 0.25 mA/V under an applied voltage of − 8 V to + 8 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
