Abstract
We report on the selective-area metal-organic vapor-phase epitaxial (SA-MOVPE) growth of GaAs-based periodic air-hole arrays on partially masked GaAs (1 1 1)A substrates for application to two-dimensional photonic crystals (2D PhCs). We obtained uniform 1-μm-pitch GaAs 2D air-hole arrays on GaAs (1 1 1)A substrates with vertical side walls under high AsH 3 partial pressure and low-growth-rate conditions. However, under these growth conditions, lateral over-growth (LOG) occurs at three corners of hexagonal air-hole, and the hole shape change to triangle. We clarified the mechanism of selective area growth on a GaAs (1 1 1)A substrates. We also tried shorter pitch (400 nm) GaAs air-hole arrays and AlGaAs SA-MOVPE on GaAs (1 1 1)A.
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