Fabrication and Characterization of Doped Polysilicon Nanowire for pH Sensor

Abstract

This paper presents the characteristics of the doped polysilicon nanowire for pH sensors. The fabrication involved two chromium mask designs. Example the first mask is used for the polysilicon nanowire pattern and the other one is for pad patterning. It involved of photolithography, deposition, etching and wet oxidation process. Different length, number of polysilicon are fabricated and then subjected to voltage, current and pH measurement. APTES is being introduced to improve the sensitivity of the polysilicon nanowire. For the low pH, the conductivity is high, while for the high pH, the conductivity is low. The impact on investigating length is insignificant to the sensitivity of the doped polysilicon nanowire.