Abstract
A colossal electroresistance (CER) multilayered chip device composed of polycrystalline 0.8‐at% La‐doped SrTiO3 and Pd electrodes has been successfully fabricated. Polycrystalline SrTiO3 devices exhibit large hysteresis in their current–voltage (I–V) characteristics after the forming process. Further, their resistance states can be switched by applying voltage pulses above ±50 V, and the resistance changes by approximately two orders of magnitude (from ∼600 Ω to ∼80 kΩ). These resistance‐switching behaviors demonstrate that even ceramics can exhibit resistance changes as large as thin‐film devices and provide the possibility of new switching devices with the memory effect composed of ceramics.
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