Abstract
Co based full-Heusler compounds Co 2 XY (X is 3d transition element, and Y is main element) show prominent prospects in spintronics, because of their theoretical half-metal states, experimental high tunneling magnetic resistance applications, and high Curie temperature (TC).[1-3] Besides, these compounds have a low magnetic damping constant, making them useful in low loss microwave application and spin transfer torque (STT), which has potential application in magnetic random access memory and spin-transfer nanocontact oscillator. Co 2 MnSi is a widely studied Heusler compounds, with T C =985K and experimentally reported a small damping constant 0.003.[4] Besides Brillouin light scattering, ferromagnetic resonance (FMR) is another unique technique to investigate the magnetic properties of magnetic materials, including the dynamical behavior of magnetization. The Gilbert damping factor, as well as magnetic anisotropy, gyromagnetic ratio, and effective magnetization can be obtained by analyzing the resonance field and linewidth from FMR measurements. Here, we report the fabrication and magnetic properties of magnetron sputtered Co 2 MnSi thin film with an extreme low Gilbert damping constant.
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