Abstract
Aluminum nitride nanoparticles (AlN-NPs) were fabricated by a RF magnetron sputtering and inert gas condensation technique. By keeping the source parameters and sputtering time of 4 h fixed, it was possible to produce AlN-NPs with a size in the range of 2–3 nm. Atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD), and UV-visible absorption were used to characterize the obtained AlN-NPs. AFM topography images showed quazi-sphere nanoparticles with a size ranging from 2 to 3 nm. The XRD measurements confirmed the hexagonal wurtzite structure of AlN nanoparticles. Furthermore, the optical band gap was determined by the UV-visible absorption spectroscopy. The Raman spectroscopy results showed vibration transverse-optical modes A1(TO), E1(TO), as well as longitudinal-optical modes E1(LO), A1(LO).
Highlights
Aluminum nitride (AlN) is a large and direct band-gap semiconductor material (Eg = 6.2 eV)
Aluminum nitride nanoparticles were produced by a RF magnetron sputtering inert gas condensation
Aluminum nitride nanoparticles were produced by a RF magnetron sputtering inert gas technique inside an ultra-high vacuum system
Summary
Aluminum nitride (AlN) is a large and direct band-gap semiconductor material (Eg = 6.2 eV) It has a hexagonal wurtzite structure similar to zinc oxide (ZnO) and lattice constants of a = 0.311 nm and c = 0.498 nm. It is characterized by high thermal conductivity and chemical stability, a high melting point, low coefficient of thermal expansion, high electrical resistivity, low dielectric loss, high mechanical stiffness, and high acoustic wave velocity [1,2,3]. Many regions of the world are suffering from the pollution of water; it is necessary to use sterilization systems to clean the water
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