Abstract
This paper presents the results on the design, fabrication and characterization of a cantilever-type NEM relay featuring a hammer-shaped tip and built in the back end of a conventional 0.35μm CMOS technology. A high on/off current ratio (higher than 107), a subthreshold swing of only 285μV/dec, and zero off-state leakage current were experimentally observed. Through an endurance test of 3·103 switching cycles, the relay showed a stable pull-in voltage of 31.25V with an absolute variation of only 0.5V. The resonant frequency was also characterized, and observed at 456.97kHz. Finally, the paper discusses the usability of the presented device as a mass sensor with mass-stiffness decoupling capability for on-chip detection. This innovative feature, which could benefit the application portfolio of the emerging IoT era, lies on the fact that both pull-in voltage and resonant frequency can be fully electrically determined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
