Abstract
AbstractP-channel planar IGBT devices were made on 4H-SiC. Punch-through buffer and drift layers were designed to block 5 kV were grown on 4H-SiC n-type substrate. Ion implantion was used for all selective doping such as n-well, p+, n+, JFET region and terminations. Gate oxidation was thermally grown and annealed. Blocking voltage of 5.7 kV was demonstrated. IGBTs exhibit VTH of -12 V, VT = -3.1 V, Rdiff,on = 400 mΩcm2 at Vg = -34 V at room temperature. Ron decreased to 108 mΩcm2 at Vg = -30 V at 300°C.
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