Abstract
Low pump-power operation of semiconductor Raman lasers with a tapered waveguide structure is reported. The waveguides are both laterally and vertically tapered and fabricated by the temperature difference method under controlled vapour pressure with liquid-phase epitaxy and an improved growth process, which has not caused any serious increase of internal optical loss. The lowest threshold pump power of 55 mW has been achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
