Abstract
Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm 2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
