Fabrication and characteristics of micromachined Ta-N ceramic thin-film pressure sensors

Abstract

This paper describes the fabrication process and characteristics of ceramic thin-film pressure sensors based on Ta-N strain gauges for harsh environment applications. The Ta-N thin-film strain gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragm with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low nonlinearity and excellent temperature stability. The sensitivity is 1.21-1.097 mV/V/spl middot/kgf/cm/sup 2/ in temperature ranges of 25-200/spl deg/C and a maximum non-linearity is 0.43 %FS.