Abstract
본 논문에서는 Ta-N 스트레인게이지를 이용한 극한 환경용 세라믹 박막형 압력센서의 제작 및 특성에 관하여 연구하였다. 압력감지부로 Ta-N 스트레인게이지를 사용하였으며, SDB(Si-wafer Direct Bonding)와 전기화학적 식각정지법을 이용하여 매몰 cavity를 가지는 저가격 고수율의 Si 박막 다이어프램을 제작하였다. 또한, 실리콘 박막 다이어프램상에 박막형 스트레인게이지를 형성하여 세라믹 박막형 압력센서를 제작하였다. 제작된 세라믹 박막형 압력 센서는 기존의 스트레인 게이지를 이용한 로드셀에 비해서 온도특성이 우수하고 재현성, 소형화, 집적화 및 저가격화가 가능하기 때문에 고온, 고압 등의 각한 환경에서도 사용이 가능할 것으로 기대된다. This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is <TEX>$1.097-1.21\;mV/V{\codt}kgf/cm^2$</TEX> in the temperature range of <TEX>$25-200^{\circ}C$</TEX> and the maximum non-linearity is 0.43%FS.
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