Abstract
An integrated injection logic inverter has been realised in GaAs/GaAlAs material using ion implantation and Zn diffusion. Si ions have been implanted to merge the current source with the switching transistor, whereas the Be implantation provides the base contact. The shallow p+-emitter of the pnp current source has been fabricated by Zn diffusion. Instead of a lateral pnp transistor, which is typical in I2L technology, a vertical arrangement has been used. This type of transistor shows a better current efficiency and can be fabricated with a better uniformity in terms of base width. First results of an I2L inverter with a vertical pnp transistor are shown.
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