Compatible, high performance complementary bipolar transistors for integrated circuits

Abstract

Vertical pnp transistors and standard LIC npn transistors were fabricated within the same substrate with a method compatible with planar technology in every aspect of the process. On the pnp transistors, f t of up to 100 MHz, hf e of 50 at 100 µA of I and LV CEO of 50 volts was measured, while the companion pnp transistors showed f t of 400 MHz, hf e of 250 at 100 µA of I and LV CEO of 70 volts. A monolithic amplifier circuit containing vertical pnp and npn transistors was made and evaluated. Its performance was compared to characteristics of the same circuit with lateral pnp transistors. The use of compatible vertical pnp transistors. The use of compatible vertical pnp transistors improved substantially the performance of the amplifier circuit.