Fabrication and characteristics of a Si multiple-quantum dots single electron transistor on SIMOX substrate

Gang Lu Gang Lu,Zhiming Chen Zhiming Chen,Jiannong Wang Jiannong Wang,Weikun Ge Weikun Ge,Shengchun Mao Shengchun Mao

doi:10.1109/icsict.2001.982166

Fabrication and characteristics of a Si multiple-quantum dots single electron transistor on SIMOX substrate

Gang Lu Gang Lu, Zhiming Chen Zhiming Chen + Show 3 more

https://doi.org/10.1109/icsict.2001.982166

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Publication Date: Oct 22, 2001

Affiliation: Hong Kong University of Science and Technology

#Single Electron Transistors #Single Electron Tunneling + Show 8 more

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Abstract

We report Si-based multiple-quantum dots single electron transistors (SETs) on p-type SIMOX substrates, based on electron beam (EB) lithography and reactive ion etching (RIE) processes. These processes offer controlled fabrication of the quantum wires (QWs) and quantum dots (QDs). Coulomb blockade and single electron tunneling are observed in the SETs.

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