Fabrication and Beta-Ray Source Test of Double-Sided Silicon Strip Sensor

Abstract

Since a double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed for various uses as a medical imaging sensor, radiation detector, sensing detector in space science, and a silicon vertexing/tracking detector in experimental particle physics. We designed and fabricated a double-sided silicon position sensor in a 5 in. fabrication line. Silicon nitride with a silicon oxide layer was used to prevent damage during sensor fabrication. Since the temperature dependences of the silicon nitride and the silicon oxide are different, the thicknesses of the Si3N4 and SiO2 layers were optimized using the ATHENA process simulation to avoid cracks. We present the measurement results of the electrical characteristics of the sensor such as leakage current and capacitance as a function of reverse bias voltage. We performed tests on the sensor using a 90Sr radioactive source and measured the signal-to-noise ratio of the prototype sensor.