Fabricating third-order nonlinear optical susceptibility of impurity doped quantum dots in the presence of Gaussian white noise

Abstract

We perform a meticulous analysis of profiles of third-order nonlinear optical susceptibility (TONOS) of impurity doped quantum dots (QDs) in the presence and absence of noise. We have invoked Gaussian white noise in the present study and noise has been introduced to the system additively and multiplicatively. The QD is doped with a Gaussian impurity. A magnetic field applied perpendicularly serves as a confinement source and the doped system has been exposed to a static external electric field. The TONOS profiles have been monitored against a continuous variation of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, Al concentration, dopant potential, relaxation time, anisotropy, and noise strength assume different values. Moreover, the influence of mode of introduction of noise (additive/multiplicative) on the TONOS profiles has also been addressed. The said profiles are found to be consisting of interesting observations such as shift of TONOS peak position and maximization/minimization of TONOS peak intensity. The presence of noise alters the features of TONOS profiles and sometimes enhances the TONOS peak intensity from that of noise-free state. Furthermore, the mode of application of noise also often tailors the TONOS profiles in diverse fashions. The observations accentuate the possibility of tuning the TONOS of doped QD systems in the presence of noise.