Abstract
Thin silicon foils with different crystal orientations were fabricated using the stress induced lift-off (SLiM-cut) method. The thickness of the silicon foils was approximately 40 µm. The foil had a smoother surface than the foil. With surface passivation, the minority carrier lifetimes of the and silicon foil were 1.0 µs and 1.6 µs, respectively. In this study, 4 cm2-thin silicon solar cells with heterojunction structures were fabricated. The energy conversion efficiencies were determined to be 10.74% and 14.74% for the and solar cells, respectively. The surface quality of the silicon foils was determined to affect the solar cell character. This study demonstrated that fabricating the solar cell by using silicon foil obtained from the SLiM-cut method is feasible.
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