Abstract
Electroluminescence from Er-doped silicon diode structures, grown with sublimation molecular beam epitaxy, has been investigated with high spectral resolution down to 0.05 cm−1. In structures optimized for preferential formation of the Er-1 center we find emission lines with full width down to 0.2 cm−1 (25 µeV) at 30 K—the narrowest lines ever observed in Si:Er electroluminescence spectra. Due to ultra-narrow emission lines and a high excitation cross-section of 4 × 10−15 cm2, such diode structures are promising for realization of an electrically pumped silicon-based laser.
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