Abstract
Abstract High-resolution and time-resolved measurements on the electroluminescence from Er-doped silicon diode structures with Er-1 center, grown with sublimation molecular beam epitaxy, have been performed within the temperature interval 30–120 K. We find emission lines with full width down to 0.2 cm −1 (25 μeV) at 30 K, the narrowest lines ever observed in Si:Er electroluminescence spectra, and excitation cross-section of 4×1 −15 cm 2 . Auger-deexcitation of Er 3+ ions with the activation energy of 16 meV was found to be the only deexcitation process in these structures and no ‘back-transfer’ deexcitation was observed. Due to ultra narrow emission lines and a high excitation cross-section such diode structures are promising for realization of an electrically pumped silicon-based laser.
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