Abstract
We present state-of-the-art results on boron emitter passivation (J0e <; 25 fA/cm2 and Sn0 <; 400 cm/s) with industrially fired positively-charged low-temperature PECVD SiOx/SiNx dielectric stacks deposited in an industrial reactor. These films feature a very low fixed charge density (~ + 6×1010 cm-2) and excellent interface quality (Dit, midgap of ~3×1010 eV-1 cm-2) after an industrial firing step. Based on contactless corona-voltage measurements and device simulation, we explain the mechanism of surface passivation to be dominated by chemical passivation rather than field-effect passivation. With excellent optical and passivation properties, these films are suitable for high-efficiency cost-effective industrial n-type silicon wafer solar cells.
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