Abstract
A large photoconduction has been observed in amorphous In2Se3 films. The films exhibit residual photocurrent with an extremely slow decay rate after stopping of a steady illumination by band gap light. They also exhibit photocurrent with an extremely slow rising rate after initiation of the illumination. The extremely slow decay and rising are explained by a model in which the illumination creates neutral defects through any structural change, the photocurrent is derived from the variable range hopping between the photocreated defect levels, and the photocreated defects decay according to the monomolecular reaction with a thermally activated decay rate.
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