Abstract
The differential gain of long wavelength GaInNAs-based quantum film (QF) lasers and highly strained GaInAs-based QF lasers have been investigated for the first time. These lasers were grown by gas-source molecular beam epitaxy, and include a small amount of Sb to improve the crystalline quality. GaInNAsSb single quantum well (SQW) ridge lasers that oscillate at 1.258 µm have an extremely large differential gain of 1.06 × 10-15 cm2 in spite of the SQW lasers; therefore GaInNAsSb lasers are suitable for high-speed lasers in the long wavelength region.
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