Abstract
We achieved extremely-high-density steady state carrier injection and transport at over ∼10000A∕cm2 into organic thin films using high thermally conductive substrates, which suppress the temperature rise inside the devices by transferring the joule heat into the substrates. Using a silicon substrate with a high thermal conductivity of 148W∕mK and a small size cathode with a radius of r=25μm, we achieved a maximum current density of Jmax=12222A∕cm2 and power density of Pmax∼105W∕cm2 in an ITO(110nm)∕copperphthalocyanine (CuPc) (25nm)∕MgAg(100nm)∕Ag(10nm) device during a fraction of a second under direct current sweep. Further, we also achieved Jmax=514A∕cm2 in a conventional organic light-emitting diode structure using the same techniques. In the CuPc based devices, we observed characteristic current density (J)–voltage (V) behavior, indicating that the J–V characteristics are controlled by the trap-free space-charge-limited currents in the high current region, and by the trapped-charge-limited current in the low current region.
Published Version
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