Abstract
The infrastructure required to support the introduction of the first full-field extreme ultraviolet lithography (EUVL) exposure tools in calendar year 2006 is under active development worldwide at a number of universities, national laboratories and semiconductor consortia. In this paper, the current status of EUVL infrastructure development in the United States is reviewed and recent progress in reducing the defect density on multilayer coated masks blanks, developing longer life and lower cost source collectors and evaluating EUVL resist performance is summarized.
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