Abstract
The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed.
Highlights
In recent decades, magnetoresistive (MR) sensors have become increasingly important, since they are critical components in technologies such as high-density information storage [1,2,3], bio-chips [4,5], Materials 2013, 6 space applications [6] and position monitoring [7]
The geometry plays a critical role in determining the magnetotransport properties of Extraordinary Magnetoresistance (EMR) structures
EMR effect has been observed with a variety of geometries and structures
Summary
Magnetoresistive (MR) sensors have become increasingly important, since they are critical components in technologies such as high-density information storage [1,2,3], bio-chips [4,5], Materials 2013, 6 space applications [6] and position monitoring [7]. The GMR and TMR effects are observed in stacks of magnetic thin films separated by conducting and insulating layers, respectively The resistance of those devices is a function of the magnetic field, due to the dependence of the spin-polarized current on the magnetization direction of the magnetic layers. A strongly geometry-dependent magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR), has been observed in hybrid structures, which consist of a high-mobility semiconductor and a metal shunt [17]. This effect, which has shown MR values of more than one million percent over a magnetic field range of several Tesla, has drawn much attention, due to its potential advantages over other solid-state magnetic field sensors.
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