Optimization of the extraordinary magnetoresistance in semiconductor–metal hybrid structures for magnetic-field sensor applications

Abstract

Semiconductor–metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with the experimental data. In particular, we investigate the important effect of the contact resistance ρ c between the semiconductor and the metal on the EMR effect. Introducing a realistic ρ c =3.5×10 −7 Ω cm 2 in our model we find that at room temperature this reduces the EMR by 30% if compared to an analysis where ρ c is not considered.