Abstract
The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail and deep states. The parameters for the tail and deep states are Ntail=1.6×1019cm−3, Ttail=540K, Ndeep=6.5×1016cm−3 and Tdeep=4058K respectively. Furthermore, the DOS from C-V provides a good fit with current-voltage characteristics, using the multiple trap and release model.
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