Extraction of the device parameters of Al/P 3OT/ITO organic Schottky diode using J–V and C–V characteristics

Abstract

Thin film of poly(3-octylthiophene) (P 3OT) was successfully prepared using dip coating technique. The morphology and the crystal structure of the prepared thin film were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. A study on interface states density distribution and characteristic parameters of the Al/P 3OT/ITO device capacitor have been made. The diode parameters such as ideality factor, series resistance and barrier height were extracted from the forward biasing J– V characteristics. The energy distribution of the interface state density D it was determined from the forward bias J– V characteristics by taking into account the bias dependence of the effective barrier height. The C– V and G/ ω– V characteristics were measured in the frequency range from 10 kHz to 1 MHz and dc biasing voltage swept from −4 V to +4 V at room temperature (300 K). The non-ideal behavior of J– V and C– V characteristics can be attributed to the presence of the interface and the series resistance.