Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors

Abstract

An extraction method for device dimensions and the lateral channel doping profile of a vertical double-diffused MOS transistor has been developed. Using C- V characterization and two-dimensional numerical analysis, the lateral device structure parameter could be extracted. The extracted device parameters are in good agreement with the expected values for a fabricated device sample. The proposed method in this paper can be very useful for analysing the electrical characteristics of VDMOS transistors.