Abstract

The lateral arsenic doping profile of the emitter outdiffused from the polysilicon layer has been estimated. It has been done by a combination of measured E/B depletion junction capacitance C EB and that calculated by 2D simulation. Since the peripheral C EB is very sensitive to the lateral doping profile, it is varied until the simulated C EB reproduces the measurement. The result shows that the lateral diffusion length is very much dependent on the drive-in condition for the diffusion. The drive-in temperature of 1050 °C / 10 sec gives the lateral diffusion of about 75 %. That of 1075 °C / 10 sec gives nearly 100 % of the vertical one.

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