Abstract
The series resistance (RS) of a solar cell, that influences fill factor and thus efficiency, is usually decomposed into individual components for development of optimization strategies. In this contribution we introduce a method to extract Rs of each part of the solar cell from TCAD simulation using free energy loss analysis. This method is particularly relevant for modern cell concepts where only TCAD simulation describes correctly high injection phenomena in lowly doped wafers, and where 2- or 3-dimensional carrier flow occurs (PERC, PERT, IBC) invalidating the classical analytical models for Rs description. We compare the lumped RS value extracted from the FELA to the RS extracted from the Multiple Light Intensity Method (MLIM) for IBC solar cells with various geometries and wafer doping levels, with and without a front surface field, and show that it is quite accurate even when high injection phenomena induce a slight underestimation of RS.
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