Abstract
An Au/Orcein/ p-Si/Al device was fabricated and the current–voltage measurements of the devices showed diode characteristics. Then the current–voltage ( I– V), capacitance–voltage ( C– V) and capacitance–frequency ( C– f) characteristics of the device were investigated at room temperature. Some junction parameters of the device such as ideality factor, barrier height, and series resistance were determined from I– V and C– V characteristics. The ideality factor of 2.48 and barrier height of 0.70 eV were calculated using I– V characteristics. It has been seen that the Orcein layer increases the effective barrier height of the structure since this layer creates the physical barrier between the Au and the p-Si. The interface state density N ss were determined from the I– V plots. The capacitance measurements were determined as a function of voltage and frequency. It was seen that the values of capacitance have modified with bias and frequency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
