Abstract
In this study, we focus on the terahertz radiation from a Si metal–oxide–semiconductor (MOS) structure and formulate the mechanism of THz radiation to semi-quantitatively evaluate the MOS devices. A simplified model, which can effectively explain the dependence of THz emission amplitudes on external bias voltages for both n- and p-type Si MOS structures, is derived from Poisson’s equation with considering external effects, including the flat-band voltage, hot carrier diffusion, and quick recombination through interface states due to photocarrier field acceleration. The results reveal the possibility on estimating the surface parameters, such as surface potential and dielectric layer.
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