Extracting interface trap density in β-Ga<sub>2</sub>O<sub>3</sub>-based heterointerface

Abstract

<p indent="0mm">High performance devices need a high quality interface between metal/semiconductor, semiconductor/semiconductor or semiconductor/insulator. In this work, we report three different methods to obtain the interface trap density (<italic>D</italic>_it) in β-Ga₂O₃-based SBD, PN, and MOS capacitors. The characteristics of capacitance-voltage and conductance-voltage corresponding to frequency demonstrate a low <italic>D</italic>_it for Ni-SBD. Also, we introduce admittance spectroscopy (AS) to evaluate <italic>D</italic>_it of NiO/β-Ga₂O₃ PN diode. Moreover, the accurate high-low frequency capacitance method has been adopted for the MOS capacitor. The verified methods for extracting <italic>D</italic>_it offer a quantification of the quality of interface, which contribute to interface processing and device design.