Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs

Abstract

This work proposes a methodology to decompose the center and edge current contributions around threshold in mesa-isolated SOI MOSFETs using 3D TCAD simulations. Applied to pMOS measurements, it reveals that the subthreshold regime is driven by the active edge, whatever the device width. It also explains why the threshold voltage modulation by the back-gate bias depends on the device width, as well as why these effects are worse for high channel doping values.