Abstract
This paper reviews the influence of homogeneous strains, external and/or internal, on the electronic and optical properties of semiconductor microstructures such as epilayers, quantum wells and super-lattices. The effects of large external compressive stress (\\vecS) on the interband (intersubband) transitions of two systems are discussed in detail: (a) \\vecS|| [100] on biaxially strained bulk GaAs and two GaAs/Ga0.79Al0.29As single quantum wells (SQWs) grown on (001) Si and (b) \\vecS|| [100] and \\vecS|| [110] (piezoelectric effect) on a (001) GaAs/Ga0.73Al0.27As SQW structure.
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