Abstract

This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of the device perspectives for digital applications. Based on the original research realized by our group over the last years, advantages and necessity of those techniques will be demonstrated on different study cases of various advanced MOSFETs, such as Fully Depleted Silicon-on-Insulator (FDSOI), FinFETs and NanoWires (NW) in a wide temperature range (from cryogenic, 4 K up to 250°C). A wide frequency band characterization (from DC up to hundred GHz range) will be positioned as a key element enabling a fair device assessment towards analog and RF applications. Importance of the “extrinsic” parasitic elements in the advanced devices is enormous, sometimes even dominating the device performance. Therefrom arises the need for a proper separate extraction and discussion of “intrinsic” versus “extrinsic” parameters.

Highlights

  • Enormous progress of the semiconductor technology during the last decades was mainly driven by the continuous demand for the increase of the operation speed and integration density of the complex digital circuits [1]

  • Hf-based dielectrics with equivalent oxide thickness (EOT) of ∼1 nm [2] are in use but new high-k dielectrics with k > 30 and EOT down to 0.7 nm are required for further scaling [1] with La silicate appearing as a strong candidate [2]

  • This is because buried oxide (BOX) thinning eases heat evacuation towards Si substrate, whereas it enhances the electrical coupling through the substrate

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Summary

INTRODUCTION

Enormous progress of the semiconductor technology during the last decades was mainly driven by the continuous demand for the increase of the operation speed and integration density of the complex digital circuits [1]. Appropriate characterization methodologies to assess the inner device parameters independently of any external influence must be employed to properly explore the physical phenomena in a relation to the main Figures of Merit (FoM) for further applications. This article does not target to comparatively assess different advanced MOSFETs, but rather review methodological approaches enabling a fair assessment of novel device architectures for their analog and RF performance. Their exploitation will be demonstrated on selected study cases of various advanced devices in wide temperature and frequency ranges, performed in our laboratory over the last years [24]–[78]. We would like to note that while non-linearity, distortion and noise are of high importance for the analog/RF applications, their discussion is omitted in this article due to lack of space

ANALOG AND RF FIGURES OF MERIT
WIDE FREQUENCY BAND CHARACTERIZATION
SELF-HEATING ASSESSMENT
RF CHARACTERIZATION
Findings
CONCLUSION
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