Abstract
An experimental and simulation study of short-channel planar bulk nMOSFET performance enhancement achieved with oxygen insertion technology is presented. The benefits of this technology for low-power digital logic circuits make it a promising evolutionary approach to extend bulk MOSFET scaling.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
