Abstract
The voltage-controlled magnetic anisotropy of ferromagnetic metals may offer potential applications of nonvolatile memories with ultralow power consumption. For achieving ultrafast recording and long-time endurance, voltage-induced effects without undesirable lattice distortions should be ensured. In this study, in-situ extended X-ray absorption fine structure analysis of an Fe/Pt/MgO junction demonstrated the unaltered interfacial atomic structure, in which the radial distances between the Pt and the neighboring Fe, Pt, O, and Mg atoms changed by less than ±0.01 Å under electric fields of ±0.18 V/nm. Therefore, the anisotropy change is driven by a purely electronic mechanism without lattice deformation or atomic relaxation.
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